This InstituteQ Colloquium features Professor Dan Fleetwood from Vanderbilt University. The title of his talk is “Low-Frequency Noise and Defects in Microelectronics.”
Dan Fleetwood received his Ph. D. degrees in Physics from Purdue University in 1984. Dan joined Sandia National Laboratories in Albuquerque, New Mexico, in 1984, and was named a Distinguished Member of the Technical Staff in the Radiation Technology and Assurance Department in 1990.
In 1999 he accepted a position as Professor of Electrical Engineering at Vanderbilt University in Nashville, Tennessee. In 2000, he was also named a Professor of Physics. In July 2001 he was appointed Associate Dean for Research of the Vanderbilt School of Engineering, and from June 1, 2003, through June 30, 2020, he was Chair of the Electrical Engineering and Computer Science Department. Since 2009, he is appointed Landreth Chair of Engineering.
Dan is the author of many publications on radiation effects in microelectronics, low-frequency noise, and defects in microelectronic devices and materials, 15 of which have been recognized with outstanding paper awards. In 2009, Dan received the 2009 Merit Award from the IEEE Nuclear and Plasma Sciences Society (NPSS), its highest individual technical honor. He serves as Senior Editor, Radiation Effects, for the IEEE Transactions on Nuclear Science and Distinguished Lecturers Chair, for the IEEE NPSS. He is a Life Fellow of the IEEE and a Fellow of the American Physical Society, American Association for the Advancement of Science, and the National Academy of Inventors. Dan is also an International Correspondence Chess Grandmaster, and co-winner of the 33rd International Correspondence Chess World Championship.
Event details:
When: 14:30-15:30 on 5.11.2026
Where: Room 215 Meyer, Konetekniikka 1, Otakaari 4, 02150 Espoo & Online
Host: Aalto University Professor Pertti Hakonen
More details: Refreshments will be served before the event, so make sure to arrive 10-15 minutes early!
From Dan Fleetwood: What will your talk discuss?
Low-frequency (LF) noise is observed in a remarkable number of diverse cosmological, biological, economic, and electronic systems. This talk will introduce LF noise in microelectronics, describe basic models that enable insight into its origins, and illustrate how LF noise measurements enable insights into effects of defects and impurities on microelectronic materials and devices. The presentation will also provide several examples of how LF noise and/or exposure to ionizing radiation can lead to performance degradation and/or errors in microelectronics, nanostructures, and quantum systems in terrestrial and space environments.
